International Scholarly Research Notices / 2012 / Article / Fig 5

Research Article

Barrier Evaluation by Linearly Increasing Voltage Technique Applied to Si Solar Cells and Irradiated Pin Diodes

Figure 5

Comparison of the simulated charge extraction BELIV current transients varying density (1010–1016 cm−3) of carrier capture centers in Si material with 𝑁 𝐷 = 1 0 1 2 c m 3 doping-density.
543790.fig.005

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