Barrier Evaluation by Linearly Increasing Voltage Technique Applied to Si Solar Cells and Irradiated Pin Diodes
Figure 7
Simulated (by using TCAD platform, Alternative Solutions) distribution of potential (a) and of current density (b) for the perpendicularly located probes within a single layer. Values of potential are indicated by a white-gray-black bar in (a) Length of vectors shows simulated current density in (b). (c) Comparison of the simulated (at reverse bias) BELIV current transient (for parallel-plate electrodes and for initial delay ns: solid grey curve) with those obtained for a needle-tip probe located on boundary of layered structure within an elevated resistivity material layer (behind the interface of the abrupt junction), when delay (broken and black curves) is dependent on spreading resistance . The broken and black (solid) curves illustrate simulated transients for a BELIV response measured on using a convolution integral with values of ns (black solid), 50 ns (dot), and 5 μs (dash-dot), respectively.
