International Scholarly Research Notices / 2012 / Article / Fig 7

Research Article

Barrier Evaluation by Linearly Increasing Voltage Technique Applied to Si Solar Cells and Irradiated Pin Diodes

Figure 7

Simulated (by using TCAD platform, Alternative Solutions) distribution of potential (a) and of current density (b) for the perpendicularly located probes within a single layer. Values of potential are indicated by a white-gray-black bar in (a) Length of vectors shows simulated current density in (b). (c) Comparison of the simulated (at reverse bias) BELIV current 𝑖 𝐢 ( 𝑑 ) transient (for parallel-plate electrodes and for initial delay 𝑅 𝐢 = 5 ns: solid grey curve) with those obtained for a needle-tip probe located on boundary of layered structure within an elevated resistivity material layer (behind the interface of the abrupt junction), when delay 𝑅 𝑆 𝐢 𝑏 0 (broken and black curves) is dependent on spreading resistance 𝑅 𝑆 βŸ‚ . The broken and black (solid) curves illustrate simulated transients for a BELIV response measured on 𝑅 𝐿 = 5 0 Ξ© using a convolution integral with 𝑅 𝑆 𝐢 𝑏 0 values of 𝑅 𝑆 𝐢 𝑏 0 = 5 ns (black solid), 50 ns (dot), and 5 μs (dash-dot), respectively.
543790.fig.007a
(a)
543790.fig.007b
(b)
543790.fig.007c
(c)

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