Development of Quantum Simulator for Emerging Nanoelectronics Devices

Figure 4

(a) Structure of single electron transistor, (b) equivalent schematic diagram of SET. The quantum dot is connected to the source and drain electrodes through small tunnel barriers. The potential in the quantum dot can be modified by the gate electrode which is capacitively coupled to the quantum dot, 𝑉_𝐺=(2𝑛+1)𝑒/2𝐶_𝐺. The DC bias (𝑉_𝐷) is applied and the current is measured as a function of 𝑉_𝐷 and 𝑉_𝐺. The SET’s parameters are 𝐶_𝑆, 𝐶_𝐷, 𝐶_𝐺, Γ_𝑆, and Γ_𝐷.

(a)

(b)