Table of Contents
ISRN Electronics
Volume 2012 (2012), Article ID 827452, 7 pages
http://dx.doi.org/10.5402/2012/827452
Research Article

Modelling, Design, and Performance Comparison of Triple Gate Cylindrical and Partially Cylindrical FinFETs for Low-Power Applications

1Department of Electronics and Communication Engineering, Motilal Nehru National Institute of Technology, Allahabad 211004, India
2RV VLSI Design Centre, CA 17, 36th Cross, Jayanagar Bangalore, Bangalore 560041, India
3Wipro VLSI, Electronic City, Bangalore 560100, India
4National Institute of Technology, Raipur 492010, India

Received 30 September 2012; Accepted 13 November 2012

Academic Editors: X. Kavousianos, J. Solsona, Y. Takahashi, and E. Tlelo-Cuautle

Copyright © 2012 Sanjeev Rai et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

How to Cite this Article

Sanjeev Rai, Jyotsna Sahu, Wanjul Dattatray, R. A. Mishra, and Sudarshan Tiwari, “Modelling, Design, and Performance Comparison of Triple Gate Cylindrical and Partially Cylindrical FinFETs for Low-Power Applications,” ISRN Electronics, vol. 2012, Article ID 827452, 7 pages, 2012. doi:10.5402/2012/827452