Modelling, Design, and Performance Comparison of Triple Gate Cylindrical and Partially Cylindrical FinFETs for Low-Power Applications

Table 1

Simulation result for 30 nm C-FinFET and PC-FinFET.

Parameter	C-FinFET	PC-FinFET
	(fin width 30 nm)	(fin width 30 nm)
𝑉th (V)	0.40245	0.38826
𝐼on (A/μm)	8.30485×10^−6	1.08006×10^−5
𝐼off (A/μm)	9.73041×10^−12	6.71352×10^−12
Sub-threshold slope (mV/decade)	69.0125	62.247
DIBL (mV/V)	127.03	61.037
Maximum Temperature (K)	458	430