Table of Contents
ISRN Nanomaterials
Volume 2012, Article ID 852405, 11 pages
http://dx.doi.org/10.5402/2012/852405
Research Article

Visible and Deep-Ultraviolet Raman Spectroscopy as a Tool for Investigation of Structural Changes and Redistribution of Carbon in Ni-Based Ohmic Contacts on Silicon Carbide

1Department of Characterisation of Nanoelectronic Structures, Institute of Electron Technology, Al. Lotników 32/46, 02-668 Warsaw, Poland
2Department of Photochemistry and Spectroscopy, Institute of Physical Chemistry, Polish Academy of Sciences, Kasprzaka 44/52, 01-224 Warsaw, Poland
3Diagnostic Center, V. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine, Pr. Nauky 45, 03028 Kiev, Ukraine
4Laboratory of Growth and Physics of Low Dimensional Crystals, Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warsaw, Poland
5Department of Micro- and Nanotechnology of Wide Bandgap Semiconductors, Institute of Electron Technology, Al. Lotników 32/46, 02-668 Warsaw, Poland

Received 8 June 2012; Accepted 27 June 2012

Academic Editors: R. Arenal, W. Bao, M. Mirzaei, and G. Speranza

Copyright © 2012 Paweł Borowicz et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

How to Cite this Article

Paweł Borowicz, Adrian Kuchuk, Zbigniew Adamus, et al., “Visible and Deep-Ultraviolet Raman Spectroscopy as a Tool for Investigation of Structural Changes and Redistribution of Carbon in Ni-Based Ohmic Contacts on Silicon Carbide,” ISRN Nanomaterials, vol. 2012, Article ID 852405, 11 pages, 2012. https://doi.org/10.5402/2012/852405.