Visible and Deep-Ultraviolet Raman Spectroscopy as a Tool for Investigation of Structural Changes and Redistribution of Carbon in Ni-Based Ohmic Contacts on Silicon Carbide

<table>Comparison of normalized Raman spectra of carbon structures measured for different samples. <i>nsc1_1</i>—black line, <i>nsc1_3</i>—green line, and <i>nsc1_2</i>—red line. The excitation wavelength was equal to 488 nm.</table>

International Scholarly Research Notices

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Figure 3: Visible and Deep-Ultraviolet Raman Spectroscopy as a Tool for Investigation of Structural Changes and Redistribution of Carbon in Ni-Based Ohmic Contacts on Silicon Carbide 

Figure 3 | Visible and Deep-Ultraviolet Raman Spectroscopy as a Tool for Investigation of Structural Changes and Redistribution of Carbon in Ni-Based Ohmic Contacts on Silicon Carbide 