Visible and Deep-Ultraviolet Raman Spectroscopy as a Tool for Investigation of Structural Changes and Redistribution of Carbon in Ni-Based Ohmic Contacts on Silicon Carbide

<table>Comparison of normalized Raman spectra observed for <i>nsc1_1</i>, <i>nsc1_3,</i> and <i>nsc1_2</i> in the range around ~2700 cm<sup>−1</sup> (<i>2D</i> band). In the case of <i>nsc1_2</i> the intensity of the signal observed in this range of Raman shift was so weak that the intensity of <i>2D</i> band was negligible. Excitation wavelength 488 nm.</table>

International Scholarly Research Notices

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Figure 4: Visible and Deep-Ultraviolet Raman Spectroscopy as a Tool for Investigation of Structural Changes and Redistribution of Carbon in Ni-Based Ohmic Contacts on Silicon Carbide 

Figure 4 | Visible and Deep-Ultraviolet Raman Spectroscopy as a Tool for Investigation of Structural Changes and Redistribution of Carbon in Ni-Based Ohmic Contacts on Silicon Carbide 