Visible and Deep-Ultraviolet Raman Spectroscopy as a Tool for Investigation of Structural Changes and Redistribution of Carbon in Ni-Based Ohmic Contacts on Silicon Carbide
Figure 6
Analysis of Raman spectra in the range of Raman shift corresponding to and bands () measured with visible excitation (488 nm)—panel (a) nsc1_1, panel (b) nsc1_3, and panel (c) nsc1_2. The main plot in each panel presents measured data (red points) and fitted Lorentzian components (black line). The maxima of profiles are given in the plot. Upper inset compares measured data (red points) with fitted function (black line). Lower inset presents autocorrelation function as a certificate of quality of fitting procedure.
