Visible and Deep-Ultraviolet Raman Spectroscopy as a Tool for Investigation of Structural Changes and Redistribution of Carbon in Ni-Based Ohmic Contacts on Silicon Carbide

Table 1

Annealing temperature used in the second step of the fabrication process (^°C) and specific contact resistance (Ω cm²) of investigated samples—nsc1_1, nsc1_3, and nsc1_2.

Sample	Annealing temperature; (^°C)	Specific contact resistance; (Ω cm^2)
n sc1_1	1000	2.0±0.15×10^−4
nsc1_3	950	3.4±0.40×10^−4
nsc1_2	800	3.9±1.00×10^−4