Visible and Deep-Ultraviolet Raman Spectroscopy as a Tool for Investigation of Structural Changes and Redistribution of Carbon in Ni-Based Ohmic Contacts on Silicon Carbide

Table 3

Intensity ratio of bands: D to G (𝐼(𝐿₁)/𝐼(𝐿₂)) and 𝐷^′ to G (𝐼(𝐿₃)/𝐼(𝐿₂)). Since heights in maxima of bands offer more reliable information, due to smaller impact from different structures, the ratio of maxima of profiles is presented.

Intensity ratio	nsc1_1	nsc1_3	nsc1_2
𝐼(𝐿1)/𝐼(𝐿2)	0,84	1,27	1,16
𝐼(𝐿3)/𝐼(𝐿2)	0,21	0,28	—