Visible and Deep-Ultraviolet Raman Spectroscopy as a Tool for Investigation of Structural Changes and Redistribution of Carbon in Ni-Based Ohmic Contacts on Silicon Carbide

Table 4

Summary of analysis of 2D band. First column—the name of the sample, second and third columns—position of the maximum of first Lorentzian fitting component (𝐿₁) and its FWHM, respectively, fourth and fifth columns—position of the maximum and FWHM of second Lorentzian fitting component (𝐿₂), respectively, and sixth column—ratio of intensities: 𝐼(𝐿₁)/𝐼(𝐿₂). Values of maxima positions and FWHM’s in cm⁻¹. The intensities used to calculate values presented in sixth column—heights of profiles. Data of profiles used to model the hole are omitted because this feature is not discussed in the paper.

Sample	𝐿1		𝐿2		𝐼(𝐿1)/𝐼(𝐿2)
	Max (cm^−1)	FWHM (cm^−1)	Max (cm^−1)	FWHM (cm^−1)
n sc1_1	2701,7	51,9	2727,2	46,4	1,07
nsc1_3	2701,0	68,6	2728,3	49,8	1,58