Table of Contents
ISRN Electronics
Volume 2013 (2013), Article ID 271658, 5 pages
http://dx.doi.org/10.1155/2013/271658
Research Article

Influence of Carbon Layer on the Properties of Ni-Based Ohmic Contact to n-Type 4H-SiC

1V. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine, Pr. Nauky 45, 03028 Kyiv, Ukraine
2Institute of Physics, PAS of Poland, Al. Lotnikow 32/46, 02-668 Warsaw, Poland
3Institute of Electron Technology, Al. Lotnikow 32/46, 02-668 Warsaw, Poland

Received 27 November 2012; Accepted 5 February 2013

Academic Editors: C. W. Chiou and L.-F. Mao

Copyright © 2013 A. Kuchuk et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

How to Cite this Article

A. Kuchuk, V. Kladko, Z. Adamus, et al., “Influence of Carbon Layer on the Properties of Ni-Based Ohmic Contact to n-Type 4H-SiC,” ISRN Electronics, vol. 2013, Article ID 271658, 5 pages, 2013. doi:10.1155/2013/271658