Wavelength Width Dependence of Cavity Temperature Distribution in Semiconductor Diode Laser

Table 2

Laser bar structure layers specification.

Number	Layers	Function	Thickness (A)	Doping (cm^−3)
1	P contact Au/Ti/Pt	Contact	3000	—
2	SiO2	Dielectric	1300	—
3	p-GaAs	Contacting	2500	(3–15) × 10^18
4	p-Al0.15Ga0.35In0.5P	Cladding	12000	2 × 10^18
5	Ga0.17In0.83P	SCH	4500	5 × 10^17
6	GaAs0.81P0.19	QW	160
7	Ga0.17In0.83P	SCH	4500	5 × 10^17
8	n-Al0.15Ga0.35In0.5P	Cladding	12000	2 × 10^18
9	n-GaInP	Buffer	4000	2 × 10^18
10	n-GaAs	Substrate	110000	2.2 × 10^18
11	N contact Au/Ge/Ni	Contact	4000	—