International Scholarly Research Notices / 2013 / Article / Tab 2

Research Article

Wavelength Width Dependence of Cavity Temperature Distribution in Semiconductor Diode Laser

Table 2

Laser bar structure layers specification.

NumberLayersFunctionThickness (A)Doping (cm−3)

1P contact Au/Ti/PtContact3000
2 SiO2Dielectric1300
3p-GaAsContacting2500(3–15) × 1018
4p-Al0.15Ga0.35In0.5PCladding120002 × 1018
5Ga0.17In0.83PSCH45005 × 1017
6GaAs0.81P0.19QW160
7Ga0.17In0.83PSCH45005 × 1017
8n-Al0.15Ga0.35In0.5PCladding120002 × 1018
9n-GaInPBuffer40002 × 1018
10n-GaAsSubstrate1100002.2 × 1018
11N contact Au/Ge/NiContact4000

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