Table of Contents
ISRN Electronics
Volume 2013, Article ID 528094, 5 pages
Research Article

Optimum Barrier Height for SiC Schottky Barrier Diode

IEEE Alexandria University, Alexandria 21913, Egypt

Received 4 April 2013; Accepted 13 June 2013

Academic Editors: H. L. Hartnagel, M. Liao, and L.-F. Mao

Copyright © 2013 Alaa El-Din Sayed Hafez and Mohamed Abd El-Latif. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


The study of barrier height control and optimization for Schottky barrier diode (SBD) from its physical parameters have been introduced using particle swarm optimization (PSO) algorithm. SBD is the rectifying barrier for electrical conduction across the metal semiconductor (MS) junction and, therefore, is of vital importance to the successful operation of any semiconductor device. 4H-SiC is used as a semiconductor material for its good electrical characteristics with high-power semiconductor devices applications. Six physical parameters are considered during the optimization process, that is, device metal, mobile charge density, fixed oxide charge density, interface trapped charge density, oxide thickness, and voltage drop across the metal-semiconductor contact. The optimization process was performed using a MATLAB program. The results show that the SBD barrier height has been optimized to achieve a maximum or minimum barrier height across the contact, in addition to the ability of controlling the physical parameters to adjust the device barrier height.