Table of Contents
ISRN Condensed Matter Physics
Volume 2013, Article ID 530259, 12 pages
http://dx.doi.org/10.1155/2013/530259
Research Article

Optical Rectification and Second Harmonic Generation on Quasi-Realistic InAs/GaAs Quantum Dots: With Attention to Wetting Layer Effect

1Department of Laser and Optical Engineering, University of Bonab, Bonab, Iran
2Department of Physics, Faculty of Science, Shahid Chamran University of Ahvaz, Ahvaz, Iran
3Research Institute for Applied Physics and Astronomy, University of Tabriz, Tabriz, Iran

Received 17 September 2013; Accepted 10 October 2013

Academic Editors: C. Bauerle and V. Kochereshko

Copyright © 2013 A. Khaledi-Nasab et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

Abstract

In this paper, we have performed a theoretical study on nonlinear optical rectification (OR) and second harmonic generation (SHG) for three-level dome-shaped InAs/GaAs quantum dots (QDs) in the presence of wetting layer (WL). We used the compact density matrix framework and effective mass approximation to investigate the second order nonlinear phenomena on InAs/GaAs QD. It is demonstrated that second harmonic generation (SHG), optical rectification (OR), and their mutual absorption and refractive index changes are quite sensitive to the size of QDs. The size variations have profound irregular behavior owing to distribution of envelope function on WL and QD simultaneously. Moreover it is found that  nm is a critical radius where the regular variation takes place. It is shown that size variation causes blue shift until Critical radius (  nm) and after that, increasing the QD size lead to redshift in second order phenomena.