Table of Contents
ISRN Nanomaterials
Volume 2013, Article ID 576506, 13 pages
Research Article

Texture of GaAs Nanoparticles Deposited by Pulsed Laser Ablation in Different Atmospheres

1R. Bošković Institute, Bijenička 54, HR-10000 Zagreb, Croatia
2Institute of Physics, Bijenička 46, HR-10000 Zagreb, Croatia
3Elettra-Sincrotrone Trieste, SS 14, km 163.5, I-34149 Basovizza, Italy

Received 15 July 2013; Accepted 13 August 2013

Academic Editors: C. Angeles-Chavez and R. Birjega

Copyright © 2013 P. Dubček et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


This work analyzes the effect of nanosecond laser pulse deposition of GaAs in an inert atmosphere of Ar and He. The number of pulses and the gas pressure were varied and the effect on the nanoparticles formation was studied by scanning electron microscopy, grazing incidence small angle X-ray scattering, and atomic force microscopy. It is shown that the GaAs nanoparticle sizes and size distributions can be controlled partly by the number of laser pulses applied during their production and partly by the choice of inert gas and its pressure. Our results suggest that He is a more promising working gas producing narrower size distributions and a better size control of the grown nanoparticles.