Table of Contents
ISRN Nanotechnology
Volume 2013 (2013), Article ID 587436, 7 pages
http://dx.doi.org/10.1155/2013/587436
Research Article

Design of a Single-Electron Memory Operating at Room Temperature

Laboratoire de Microélectronique et Instrumentation (UR/03/13-04), Faculté des Sciences de Monastir, Avenue de l’Environnement, 5019 Monastir, Tunisia

Received 16 June 2013; Accepted 15 July 2013

Academic Editors: G. Alfieri and K. H. Park

Copyright © 2013 Amine Touati et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

How to Cite this Article

Amine Touati, Samir Chatbouri, and Kalboussi Adel, “Design of a Single-Electron Memory Operating at Room Temperature,” ISRN Nanotechnology, vol. 2013, Article ID 587436, 7 pages, 2013. doi:10.1155/2013/587436