Table of Contents
ISRN Materials Science
Volume 2013, Article ID 759462, 5 pages
Research Article

Structural and Optical Properties of Aluminum Nitride Thin Films Deposited by Pulsed DC Magnetron Sputtering

1Materials Processing Division, Bhabha Atomic Research Centre, Trombay, Mumbai 400085, India
2Applied Spectroscopy Division, Bhabha Atomic Research Centre, Trombay, Mumbai 400085, India

Received 17 July 2013; Accepted 28 August 2013

Academic Editors: E. J. Nassar and Y. Sun

Copyright © 2013 R. K. Choudhary et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


Aluminum nitride thin films were deposited on Si (100) substrate by pulsed DC (asymmetric bipolar) reactive magnetron sputtering under variable nitrogen flow in a gas mixture of argon and nitrogen. The deposited film was characterized by grazing incidence X-ray diffraction (GIXRD), atomic force microscope (AFM), spectroscopic ellipsometry, and secondary ion mass spectroscopy (SIMS). GIXRD results have shown (100) reflection of wurtzite AlN, whereas AFM micrographs have revealed very fine grained microstructure with average roughness in the range 6–8 nm. Spectroscopic ellipsometry measurements have indicated the band gap and refractive index of the film in the range 5.0–5.48 eV and 1.58–1.84, respectively. SIMS measurement has indicated the presence of oxygen in the film.