Structural and Optical Properties of Aluminum Nitride Thin Films Deposited by Pulsed DC Magnetron Sputtering

Table 1

Deposition parameters for growth of AlN thin film.

Parameter	Numerical value
Base pressure	1.1×10^−5 mbar
Power density of cathode	3.3 W/cm^2
Pulse frequency	125 kHz
Duty cycle	75%
Target-to-substrate distance	7.5 cm
Total gas (Ar + N2) flow rate	10 sccm
Substrate temperature	No external heating (~100°C)