Table of Contents
ISRN Condensed Matter Physics
Volume 2013 (2013), Article ID 960627, 6 pages
Research Article

On the Problem of Metal-Insulator Transitions in Vanadium Oxides

Physics and Technology Department, Petrozavodsk State University, Petrozavodsk 185910, Russia

Received 14 May 2013; Accepted 16 June 2013

Academic Editors: A. N. Kocharian, A. Krimmel, and A. Oyamada

Copyright © 2013 A. L. Pergament et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


The problem of metal-insulator transition is considered. It is shown that the Mott criterion is applicable not only to heavily doped semiconductors but also to many other materials, including some transition-metal compounds, such as vanadium oxides (particularly, VO2 and V2O3). The low-temperature transition (“paramagnetic metal—antiferromagnetic insulator”) in vanadium sesquioxide is described on the basis of this concept in terms of an intervening phase, between metal and insulator states, with divergent dielectric constant and effective charge carrier mass. Recent communications concerning a possible “metal-insulator transition” in vanadium pentoxide are also discussed.