Table of Contents
International Scholarly Research Notices
Volume 2014, Article ID 145759, 6 pages
http://dx.doi.org/10.1155/2014/145759
Research Article

Aspect Ratio Model for Radiation-Tolerant Dummy Gate-Assisted n-MOSFET Layout

Division of Electrical Engineering, School of Electrical Engineering & Computer Science, Korea Advanced Institute of Science and Technology, 373-1 Guseong-dong, Yuseong-gu, Daejeon 305-701, Republic of Korea

Received 27 March 2014; Accepted 29 October 2014; Published 18 November 2014

Academic Editor: Giuseppe Biondi-Zoccai

Copyright © 2014 Min Su Lee and Hee Chul Lee. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

Abstract

In order to acquire radiation-tolerant characteristics in integrated circuits, a dummy gate-assisted n-type metal oxide semiconductor field effect transistor (DGA n-MOSFET) layout was adopted. The DGA n-MOSFET has a different channel shape compared with the standard n-MOSFET. The standard n-MOSFET has a rectangular channel shape, whereas the DGA n-MOSFET has an extended rectangular shape at the edge of the source and drain, which affects its aspect ratio. In order to increase its practical use, a new aspect ratio model is proposed for the DGA n-MOSFET and this model is evaluated through three-dimensional simulations and measurements of the fabricated devices. The proposed aspect ratio model for the DGA n-MOSFET exhibits good agreement with the simulation and measurement results.