Table of Contents
International Scholarly Research Notices
Volume 2015, Article ID 484768, 11 pages
Research Article

IMPATT Diodes Based on , , and Oriented GaAs: A Comparative Study to Search the Best Orientation for Millimeter-Wave Atmospheric Windows

1Supreme Knowledge Foundation Group of Institutions, Mankundu, Hooghly, West Bengal 712139, India
2Institute of Radio Physics and Electronics, University of Calcutta, 92 APC Road, Kolkata 700009, India

Received 28 June 2014; Revised 15 January 2015; Accepted 19 February 2015

Academic Editor: Georgios Veronis

Copyright © 2015 Bhadrani Banerjee et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


The authors have carried out the large-signal (L-S) simulation of double-drift region (DDR) impact avalanche transit time (IMPATT) diodes based on , , and oriented GaAs. A nonsinusoidal voltage excited (NSVE) L-S simulation technique is used to investigate both the static and L-S performance of the above-mentioned devices designed to operate at millimeter-wave (mm-wave) atmospheric window frequencies, such as 35, 94, 140, and 220 GHz. Results show that oriented GaAs diodes are capable of delivering maximum RF power with highest DC to RF conversion efficiency up to 94 GHz; however, the L-S performance of oriented GaAs diodes exceeds their other counterparts while the frequency of operation increases above 94 GHz. The results presented in this paper will be helpful for the future experimentalists to choose the GaAs substrate of appropriate orientation to fabricate DDR GaAs IMPATT diodes at mm-wave frequencies.