Table of Contents
Journal of Atomic, Molecular, and Optical Physics
Volume 2011, Article ID 326368, 7 pages
http://dx.doi.org/10.1155/2011/326368
Research Article

Concentration and Annealing Effects on Luminescence Properties of Ion-Implanted Silica Layers

1Institute of Physics, University of Rostock, Universitaetsplatz 3, 18051 Rostock, Germany
2Institute of Physics, Johannes Gutenberg University of Mainz, Staudingerweg 7, 55128 Mainz, Germany

Received 20 October 2010; Accepted 8 January 2011

Academic Editor: R. F. O'Connell

Copyright © 2011 Roushdey Salh. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

How to Cite this Article

Roushdey Salh, “Concentration and Annealing Effects on Luminescence Properties of Ion-Implanted Silica Layers,” Journal of Atomic, Molecular, and Optical Physics, vol. 2011, Article ID 326368, 7 pages, 2011. https://doi.org/10.1155/2011/326368.