Concentration and Annealing Effects on Luminescence Properties of Ion-Implanted Silica Layers

<table>CL intensities of the violet band 3.1 eV in Ge<sup>+</sup>-implanted silica passing a maximum at <svg height="15.8375" id="M23" style="vertical-align:-3.3907pt" version="1.1" viewbox="0 0 95.012497 15.8375" width="95.012497" xmlns="http://www.w3.org/2000/svg" xmlns:xlink="http://www.w3.org/1999/xlink">
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</svg>°C; DGe: implantation dose.</table>

Journal of Atomic and Molecular Physics

fig6

Figure 6

Figure 6: Concentration and Annealing Effects on Luminescence Properties of Ion-Implanted Silica Layers 