Laser-Induced Defects in a Bulk GaAs Used as an Output Coupler in an Nd : YAG Laser Cavity
Figure 5
(a) Expanded view of a pulse from a sequence in the increased scale in a mode-locked regime of generation for . Round-trip time is 8 ns. (b) Mode-locked output pulse obtained as a result of modeling for an increase of the GaAs defects concentration by a factor of 5 and for the scheme with a telescope with .
