Journal of Atomic and Molecular Physics / 2012 / Article / Fig 5

Review Article

The Activation-Relaxation Technique: ART Nouveau and Kinetic ART

Figure 5

(a) The total potential energy of the bombarded c-Si crystal during annealing at 300 K. We show three simulations that have the same initial configuration. (b) The energy barriers crossed during a c-Si anneal at 300 K are represented by the stars. The number of topologies where we performed ART searches is shown as a continuous line.
925278.fig.005a
(a)
925278.fig.005b
(b)

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