Table of Contents
Journal of Coatings
Volume 2014, Article ID 905903, 11 pages
Research Article

Hydrogenated Silicon Carbide Thin Films Prepared with High Deposition Rate by Hot Wire Chemical Vapor Deposition Method

1School of Energy Studies, University of Pune, Pune 411 007, India
2Department of Physics, Modern College, Pune 411 005, India
3UGC-DAE-CSR, University Campus, Khandawa Road, Indore 452 017, India
4Department of Physics, University of Pune, Pune 411 007, India

Received 28 April 2013; Revised 23 September 2013; Accepted 15 October 2013; Published 4 February 2014

Academic Editor: Mariana Braic

Copyright © 2014 M. M. Kamble et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


Structural, optical, and electrical properties of hydrogenated silicon carbide (SiC:H) films, deposited from silane (SiH4) and methane (CH4) gas mixture by HW-CVD method, were investigated. Film properties are carefully and systematically studied as function of deposition pressure which is varied between 200 mTorr and 500 mTorr. The deposition rate is found to be reasonably high (9.4 nm/s 15.54 nm/s). Formation of SiC:H films is confirmed by FTIR, Raman, and XPS analysis. XRD and Raman analysis revealed that with increasing deposition pressure amorphization occurs in SiC:H films. FTIR spectroscopy analysis shows that bond density of C–H decreases while Si–C and Si–H bond densities increase with increasing deposition pressure. Total hydrogen content increases with increasing deposition pressure and was found to be <20 at.%. The absence of band ~1300–1600 cm−1 in the Raman spectra implies negligible C–C bond concentration and formation of nearly stoichiometric SiC:H films. The band gap shows increasing trend with increasing deposition pressure. The high value of Urbach energy suggests increased structural disorder in SiC:H films. Finally, it has been concluded that CH4 can be used as effective carbon source in HW-CVD method to prepare stoichiometric SiC:H films.