Hydrogenated Silicon Carbide Thin Films Prepared with High Deposition Rate by Hot Wire Chemical Vapor Deposition Method

Table 2

Energy peak positions obtained in XPS analysis of SiC:H films prepared by HW-CVD [48–57].

Bonding configuration	Energy peak position (binding energy) (eV)
Si--O𝑥	103.2
C–Si	283.2
C–C	284.6
C–O–H	286.4
C=O	288.4
O–Si	531.2
O–C–H	531.9
O=C	532.8
O–O	533.8