Theoretical Study of a Thermophysical Property of Molten Semiconductors

Table 2

Density and surface tension data for molten Si and Ge.

Element	Temperature (K)	Density (g/cm^3) [10, 11]	Exp. 𝛾 (mJ m^−2) [10, 11]	Exp. 𝛾 (mJ m^−2) [8, 9]	Cal. 𝛾 (mJ m^−2)
Si	1687	2.57	875	820	876
	1750	2.545	851	801	855
	1800	2.535	808	786	839
	1825	2.530	779	778	831
Ge	1211	5.60	583	591	572
	1250	5.56	579	587	568
	1300	5.54	576	583	562
	1350	5.52	571	579	558
	1400	5.51	568	575	556

Density and measured surface tension data were taken from [8–11]. Note that mJ m⁻² = dynes cm⁻¹ = mN m⁻¹.