Journal of Metallurgy / 2012 / Article / Fig 6

Research Article

Electrical Properties of Rapidly Annealed Ir and Ir/Au Schottky Contacts on n-Type InGaN

Figure 6

(a) Interface state density distribution profiles as a function of 𝐸 𝐶 𝐶 𝐸 S S for Ir Schottky contacts. (b) Interface state density distribution profiles as a function of 𝐸 𝐶 𝐶 𝐸 S S for Ir/Au Schottky contacts.
531915.fig.006a
(a) Ir/n-InGaN Schottky diode.
531915.fig.006b
(b) Au/Ir/n-InGaN Schottky diode.

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