Journal of Metallurgy / 2012 / Article / Tab 1

Research Article

Electrical Properties of Rapidly Annealed Ir and Ir/Au Schottky Contacts on n-Type InGaN

Table 1

The various parameters obtained from the I-V and C-V characteristics of Ir and Ir/Au Schottky contacts on n-InGaN as a function of annealing temperature.

SampleSchottky barrier heightFrom I-V Cheung’s functions
(SBH) 𝜙 𝑏 (eV )dV/d ln(I) versus I H(I) versus I
I-V C-VNordenRs (Ω) 𝑛 𝜙 𝑏 (eV )Rs(Ω)

Ir
 As-dep0.791.170.811.601882.150.80226
 300°C0.851.210.881.10621.380.8674
 400°C0.841.110.861.25831.610.85102
 500°C0.801.070.821.501221.930.81133
Ir/Au
 As-dep0.701.000.731.511711.930.71179
 300°C0.741.030.761.23901.460.75109
 400°C0.710.960.741.431091.890.72128
 500°C0.670.930.711.772312.040.68260

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