Research Article

Electrical Properties of Rapidly Annealed Ir and Ir/Au Schottky Contacts on n-Type InGaN

Table 1

The various parameters obtained from the I-V and C-V characteristics of Ir and Ir/Au Schottky contacts on n-InGaN as a function of annealing temperature.

SampleSchottky barrier heightFrom I-V Cheung’s functions
(SBH) 𝜙 𝑏 (eV )dV/d ln(I) versus I H(I) versus I
I-V C-VNordenRs (Ω) 𝑛 𝜙 𝑏 (eV )Rs(Ω)