Research Article
A Model of Numerical Calculation of Conductivity for III-V MBE Epilayers Using a Hall Device
Table 1
Scattering mechanisms used in calculations.
| Semiconductor | Scattering on ionized donors and acceptors | Scattering on acoustic phonons (deformation potential) | Scattering on acoustic phonons (piezoelectric potential) | Scattering on optics polar phonons | Scattering on space charge | Scattering on dislocations |
| InAs | ;
| | |
;
| | |
| In0.53Ga0.47As | ;
| | |
;
| | |
| GaAs | ;
| | |
;
| | |
|
|