Journal of Materials

Research Article

A Model of Numerical Calculation of Conductivity for III-V MBE Epilayers Using a Hall Device

Table 10

Conductance components for InGaAs samples at 200 K.
No.Parameter200 K
In0.53Ga0.47As In0.53Ga0.47As In0.53Ga0.47As In0.53Ga0.47As
7 μm1.0 μm1.1 μm1 μm
1 [cm−3]4.0 · 10134.65 · 10151.04 · 10171.799 · 1019
2 [cm2/V · s] 190001281085142010.5
3 [1/Ω cm]0.1229.54141.855794
4 1111
5 [cm−3]1.95 · 10148.0 · 10158.42 · 10161.2 · 1018
6 [cm2/V · s]183701440088423045
7 [1/  cm]0.57418.45119.26585
8 4.71.930.840.1
9 [cm−3]−1.85 · 1014−2.7 · 10152.53 · 10161.68 · 1019
10 [cm2/V · s]−13400−63201643.335440
11 [1/  cm]0.42.736.6695381
12 3.280.290.04716.46
13 [cm−3]3.6 · 10135.3 · 10131.38 · 1016 *
14 [cm2/V · s]64870−1840−882 *
15 [1/Ω cm]0.37−0.016−1.95 *
16 3.03−0.00164−0.014 *
17 [cm−3]4.6 · 10135.35 · 10151.233 · 10171.8 · 1019
18 [S]8.54 · 10−59.54 · 10−41.56 · 10−257.94 · 10−2
19 [S]4.02 · 10−41.845 · 10−31.31 · 10−25.85 · 10−2
20 [S]2.8 · 10−42.73 · 10−47.33 · 10−49.538
21 [S]2.59 · 10−4−1.6 · 10−6−2.145 · 10−4 *
22 [S]9.41 · 10−42.12 · 10−31.36 · 10−29.59
23 / 11.022.220.87216.55