Research Article

A Model of Numerical Calculation of Conductivity for III-V MBE Epilayers Using a Hall Device

Table 2

Main properties of the investigated semiconductors at 300 K.

Investigated semiconductorEnergy gap [eV]Intrinsic concentration [cm−3]Average distance between impurities [Å]Donor state Bohr radius [Å] Donor state ionisation energy [meV]

InAs0.354~1 · 1015384.53671.051.36
In0.53Ga0.47As0.7438.5 · 10111224.61806.82.8
GaAs1.432.2 · 106809.51047.85.25