A Model of Numerical Calculation of Conductivity for III-V MBE Epilayers Using a Hall Device

<table class="table-group" id="tab3"><tr><td><table class="table"><tr><td class="thead-hr" colspan="4"><hr/></td></tr><tr class="thead"><td align="left">No. of procedures</td><td align="center">Thickness [<i>μ</i>m]</td><td align="center">Relation between V/III</td><td align="center">Substrate temperature [°C]</td></tr><tr><td class="thead-hr" colspan="4"><hr/></td></tr><tr><td align="left">92</td><td align="center">4</td><td align="center">5</td><td align="center">440</td></tr><tr><td align="left">298</td><td align="center">5.6</td><td align="center">4.5</td><td align="center">450</td></tr><tr><td align="left">301</td><td align="center">4.7</td><td align="center">3.7</td><td align="center">500</td></tr><tr><td align="left">330</td><td align="center">9.05</td><td align="center">5.8</td><td align="center">506</td></tr><tr class="table-tr"><td colspan="4"><hr class="tbody-hr"/></td></tr></table></td></tr></table>

Growth conditions of InAs layers on (001) GaAs substrates.

Journal of Materials

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Table 3

Table 3: A Model of Numerical Calculation of Conductivity for III-V MBE Epilayers Using a Hall Device 