Stoichiometry Control of ZnO Thin Film by Adjusting Working Gas Ratio during Radio Frequency Magnetron Sputtering

<table> (Color online) (a) XRD patterns of ZnO films, (b) comparison of the FWHM values and <svg height="7.9499998" id="M18" style="vertical-align:-0.1638pt" version="1.1" viewbox="0 0 7.0250001 7.9499998" width="7.0250001" xmlns="http://www.w3.org/2000/svg" xmlns:xlink="http://www.w3.org/1999/xlink">
<g transform="matrix(.017,-0,0,-.017,.062,7.675)"><path d="M383 397q0 -32 -35 -49q-12 -6 -23 8q-37 45 -84 45t-90 -71q-40 -65 -40 -167q0 -57 22 -86t59 -29q38 0 81.5 24.5t69.5 51.5l16 -21q-44 -53 -104 -84t-109 -31q-56 0 -89.5 41t-33.5 117q0 61 30 124t79 105q33 28 81 50.5t86 22.5q34 0 59 -15.5t25 -35.5z" id="x1D450"></path></g>
</svg>-axis crystalline size in the (002) direction for the films deposited with different Ar/O<sub>2</sub> gas ratios (10/5, 10/10, 10/30 sccm/sccm, Ar and O<sub>2</sub>: 30 sccm, resp.).</table>

Journal of Materials

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Figure 5

Figure 5: Stoichiometry Control of ZnO Thin Film by Adjusting Working Gas Ratio during Radio Frequency Magnetron Sputtering 