Recent Developments in the X-Ray Reflectivity Analysis for Rough Surfaces and Interfaces of Multilayered Thin Film Materials

Figure 6

Calculated (dotted, dashed, and thin lines) and measured (thick line) reflectivity from a GaAs layer with a thickness of 48 nm on a Si substrate. In the calculation, the interface roughness 𝜎₂ is 1.0 nm. Three calculated results with the roughness 𝜎₁ of GaAs surface set at 3.5 nm, 4 nm, and 4.5 nm are shown.