Direct Current Magnetron Glow Discharge Plasma Characteristics Study for Controlled Deposition of Titanium Nitride Thin Film

<table>Bar chart showing TiN film deposition rate for different Ar : N<sub>2</sub> partial pressure ratios (Ar : N<sub>2</sub> ~ 7 : 1, Ar : N<sub>2</sub> ~ 3 : 1, Ar : N<sub>2</sub> ~ 5 : 3, Ar : N<sub>2</sub> ~ 1 : 1, Ar : N<sub>2</sub> ~ 3 : 5, Ar : N<sub>2</sub> ~ 1 : 3, and Ar : N<sub>2</sub> ~ 1 : 7) at fixed total pressure <svg height="16.049999" id="M41" style="vertical-align:-0.1638pt" version="1.1" viewbox="0 0 55.450001 16.049999" width="55.450001" xmlns="http://www.w3.org/2000/svg" xmlns:xlink="http://www.w3.org/1999/xlink">
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</svg> Torr. Discharge voltage is 600 V and magnetic field is 0.01 Tesla.</table>

Journal of Materials

fig8

Figure 8

Figure 8: Direct Current Magnetron Glow Discharge Plasma Characteristics Study for Controlled Deposition of Titanium Nitride Thin Film 