Fabrication of Thermoelectric Sensor and Cooling Devices Based on Elaborated Bismuth-Telluride Alloy Thin Films

Table 3

Fabrication parameters and the obtained room temperature values of Seebeck coefficient (𝛼), Hall mobility (𝜇), electrical resistivity (𝜌), and carrier concentration for optimal n-type Bi₂Te₃ and p-type ternary (Bi_1−𝑥Sb_𝑥)₂Te₃ (𝑥=0.77) films.

	Bi2Te3 (n-type)	(Bi1−𝑥Sb𝑥)2Te3 (𝑥=77%)
𝑇𝑐 (°C)	450	450
𝜇 (cm²/V·s)	117	178
𝜌 (𝜇Ω·m)	9	27
n, p (cm^−3)	𝟒.𝟓×𝟏𝟎^𝟏𝟗	𝟏.𝟐×𝟏𝟎^𝟏𝟗
𝛼 (𝜇V/K)	−213	+240