Investigating Phase Transform Behavior in Indium Selenide Based RAM and Its Validation as a Memory Element

Table 2

Characteristics properties of Indium Selenide based PCRAM.

Parameter	Symbol	Numeric data
Threshold voltage		0.78 V
Holding voltage		0.45 V
Melting point of In2Se3		600°C
Glass transition point (In2Se3)		373°C
Crystalline state resistance (static resistance of set)		103 Ω
Amorphous state resistance (static resistance of reset)		630 kΩ
Dynamic on-resistance		1 kΩ
Thermal conductivity of In2Se3		37 W cm^−1K^−1  (parallel); 120 W cm^−1K^−1  (perpendicular)
Thermal capacity of In2Se3		1.25 Jcm^−3K^−1
Activation energy of In2Se3		0.17 eV
Boltzmann constant		J/K
Volume of PCM cell		cm^3
Reset current		11.7 µA
Set current		208 µA
Reset pulse width		20 ns
Set pulse width		100 µs
Read current		5 µA
Read pulse width		25 ns
Resistance switching ratio	RSR
Electrical resistivity		6.7 ohm-cm
Specific heat		0.27 Jcm^−3K^−1
Reset power		80 µW
Set power		0.25 nW
Reset energy		1.6 PJ
Set energy		25 Fj
Crystallization temp		477°C