Research Article

Analyses of Short Channel Effects of Single-Gate and Double-Gate Graphene Nanoribbon Field Effect Transistors

Table 1

The transconductance and cut-off frequency of SG- and DG-GNRFETs for several channel lengths in ON state at  V.

Device typeChannel length (nm)
51015202530

(μS), SG16.8815.8814.2613.1912.7712.57
(THz), SG4.792.852.031.581.31.13
(μS), DG19.9218.3818.0618.0518.0418.04
(THz), DG4.572.581.851.461.211.03