Table of Contents
Journal of Nanoscience
Volume 2013, Article ID 641734, 10 pages
Research Article

Formation of Germanium Nitride Nanowires on the Surface of Crystalline Germanium

Institute of Cybernetics, Georgian Technical University, 5 Euli Street, 0186 Tbilisi, Georgia

Received 29 March 2013; Revised 30 May 2013; Accepted 1 June 2013

Academic Editor: Mingwang Shao

Copyright © 2013 David Jishiashvili et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


We report on the growth mechanisms of germanium nitride nanowires on the surface of crystalline Ge annealed in hydrazine vapor at different temperatures. In spite of the presence of water (and hence oxygen precursors) in hydrazine, the pure germanium nitride single crystal nanowires were produced in the temperature range of 480– C. At temperatures below C, the clusters were formed first at the Ge surface, followed by the nucleation and growth of nanowires through the Vapor-Liquid-Solid mechanism. The Vapor-Solid growth mechanism was observed at temperatures exceeding C, and Ge3N4 nanobelts were produced instead of nanowires with circular cross-sections. All nanostructures have the alpha germanium nitride structure; however, at the nucleation stage, the presence of beta Ge3N4 phase was also observed in the roots of nanowires.