Formation of Germanium Nitride Nanowires on the Surface of Crystalline Germanium
Figure 2
Formation of balls and clusters on the surface of Ge source annealed at C in hydrazine containing 3 mol.% H2O (a) and 5 mol.% H2O (b). Inset shows one of the triangular etch pits formed on the (111) Ge surface after annealing in hydrazine.
