Table of Contents
Journal of Nanoscience
Volume 2014, Article ID 725420, 15 pages
Review Article

Landauer-Datta-Lundstrom Generalized Transport Model for Nanoelectronics

Department of Information Technologies, Odessa State Environmental University, Odessa 65016, Ukraine

Received 20 June 2014; Accepted 14 August 2014; Published 17 September 2014

Academic Editor: Xizhang Wang

Copyright © 2014 Yuriy Kruglyak. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


The Landauer-Datta-Lundstrom electron transport model is briefly summarized. If a band structure is given, the number of conduction modes can be evaluated and if a model for a mean-free-path for backscattering can be established, then the near-equilibrium thermoelectric transport coefficients can be calculated using the final expressions listed below for 1D, 2D, and 3D resistors in ballistic, quasiballistic, and diffusive linear response regimes when there are differences in both voltage and temperature across the device. The final expressions of thermoelectric transport coefficients through the Fermi-Dirac integrals are collected for 1D, 2D, and 3D semiconductors with parabolic band structure and for 2D graphene linear dispersion in ballistic and diffusive regimes with the power law scattering.