Table of Contents
Journal of Nanoscience
Volume 2014, Article ID 961720, 7 pages
http://dx.doi.org/10.1155/2014/961720
Research Article

Self-Passivation by Fluorine Plasma Treatment and Low-Temperature Annealing in SiGe Nanowires for Biochemical Sensors

1Department of Electrical Engineering and Institute of Electronics, National Chiao Tung University, No. 1001, University Road, Hsinchu 300, Taiwan
2Department of Electronics Engineering, Chung Hua University, No. 707, Sec. 2, WuFu Road, Hsinchu 300, Taiwan
3Department of Electronic and Computer Engineering, National Taiwan University of Science and Technology, Taipei 106, Taiwan
4Department of Electronic Engineering, Huafan University, New Taipei City 223, Taiwan
5Department of Electrical Engineering, Chung Hua University, No. 707, Sec. 2, WuFu Road, Hsinchu 300, Taiwan

Received 1 March 2014; Revised 14 May 2014; Accepted 15 May 2014; Published 11 June 2014

Academic Editor: Oleg I. Lupan

Copyright © 2014 Kow-Ming Chang et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

How to Cite this Article

Kow-Ming Chang, Chiung-Hui Lai, Chu-Feng Chen, et al., “Self-Passivation by Fluorine Plasma Treatment and Low-Temperature Annealing in SiGe Nanowires for Biochemical Sensors,” Journal of Nanoscience, vol. 2014, Article ID 961720, 7 pages, 2014. https://doi.org/10.1155/2014/961720.