Self-Passivation by Fluorine Plasma Treatment and Low-Temperature Annealing in SiGe Nanowires for Biochemical Sensors

<table>The functionalization of the 20 nm <i>α</i>-Si/Si<sub>0.86</sub>Ge<sub>0.14</sub> nanowire after APTMS and BS3 dripping.</table>

Journal of Nanoscience

Figure 2: Self-Passivation by Fluorine Plasma Treatment and Low-Temperature Annealing in SiGe Nanowires for Biochemical Sensors 