Self-Passivation by Fluorine Plasma Treatment and Low-Temperature Annealing in SiGe Nanowires for Biochemical Sensors

<table>The sensitivity of Si<sub>0.86</sub>Ge<sub>0.14</sub> nanowire with period of treatment by CF<sub>4</sub> treatment.</table>

Journal of Nanoscience

Figure 3: Self-Passivation by Fluorine Plasma Treatment and Low-Temperature Annealing in SiGe Nanowires for Biochemical Sensors 