On Relation between Porosity of Epitaxial Layer and Quantity of Radiation Defects Generated during Radiation Processing in a Multilayer Structure

<div>Heterostructure, which consists of a substrate and an epitaxial layer. The figure also shows distribution of concentration of implanted dopant.</div>

Journal of Nanoscience

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Figure 1

Figure 1: On Relation between Porosity of Epitaxial Layer and Quantity of Radiation Defects Generated during Radiation Processing in a Multilayer Structure 

Figure 1 | On Relation between Porosity of Epitaxial Layer and Quantity of Radiation Defects Generated during Radiation Processing in a Multilayer Structure 