Table of Contents
Journal of Nanoscience
Volume 2016, Article ID 8132701, 7 pages
Research Article

Demonstration of Ultra-Fast Switching in Nanometallic Resistive Switching Memory Devices

Department of Materials Science and Engineering, University of Pennsylvania, Philadelphia, PA 19104-6272, USA

Received 31 March 2016; Accepted 25 July 2016

Academic Editor: Xuhui Sun

Copyright © 2016 Xiang Yang. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


Interdependency of switching voltage and time creates a dilemma/obstacle for most resistive switching memories, which indicates low switching voltage and ultra-fast switching time cannot be simultaneously achieved. In this paper, an ultra-fast (sub-100 ns) yet low switching voltage resistive switching memory device (“nanometallic ReRAM”) was demonstrated. Experimental switching voltage is found independent of pulse width (intrinsic device property) when the pulse is long but shows abrupt time dependence (“cliff”) as pulse width approaches characteristic time of memory device (extrinsic device property). Both experiment and simulation show that the onset of cliff behavior is dependent on physical device size and parasitic resistance, which is expected to diminish as technology nodes shrink down. We believe this study provides solid evidence that nanometallic resistive switching memory can be reliably operated at low voltage and ultra-fast regime, thus beneficial to future memory technology.